Borofloat is well recognised as a standard material for Micro-Electro-Mechanical Systems (MEMS) processes such as anodic bonding, mainly because of its characteristics of very accurate flatness and predictable thermal performance. Anodic bonding is widely used to combine silicon wafers with borosilicate glass to cap MEMS, other electronic and optical parts or to seal micro fluidic devices. A perfect match between the two substrates is critical to ensure good bonding behavior. The breakthrough from Schott has created new forms of de-bonding. Laser de-bonding through a glass carrier wafer made of borofloat glass is possible because of deep UV light transmission at the relevant laser wavelength range. It is this factor that facilitates the production of larger and thinner silicon wafers in what is a perdurable production process. As well as today’s designs of smaller and flatter products, there is also the demand for higher yield rates which makes larger and thinner wafers necessary. The temporary bonding of a silicon wafer to a carrier wafer is a necessary step during silicon wafer thinning. The quality of a carrier wafer is determined by its ability to permit fast processing and de-bonding times and to achieve flawless surface cleanliness of the silicon wafer. Deep UV light transmission at correct laser wavelength ranges is an imperative for this type of wafer de-bonding.
